JPH0581069B2 - - Google Patents

Info

Publication number
JPH0581069B2
JPH0581069B2 JP60500400A JP50040085A JPH0581069B2 JP H0581069 B2 JPH0581069 B2 JP H0581069B2 JP 60500400 A JP60500400 A JP 60500400A JP 50040085 A JP50040085 A JP 50040085A JP H0581069 B2 JPH0581069 B2 JP H0581069B2
Authority
JP
Japan
Prior art keywords
line
bit
gate
tunneling
bit ground
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60500400A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61500939A (ja
Inventor
Dareru Rinaason
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of JPS61500939A publication Critical patent/JPS61500939A/ja
Publication of JPH0581069B2 publication Critical patent/JPH0581069B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
JP60500400A 1984-01-06 1984-12-24 Ｅ２ｐｒｏｍメモリ装置 Granted JPS61500939A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US568668 1984-01-06
US06/568,668 US4654825A (en) 1984-01-06 1984-01-06 E2 prom memory cell

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP4331611A Division JPH05267690A (ja) 1984-01-06 1992-12-11 Ｅ２ｐｒｏｍメモリセル
JP5163539A Division JPH06163918A (ja) 1984-01-06 1993-07-01 Ｅ２ｐｒｏｍメモリセル

Publications (2)

Publication Number Publication Date
JPS61500939A JPS61500939A (ja) 1986-05-08
JPH0581069B2 true JPH0581069B2 (en]) 1993-11-11

Family

ID=24272236

Family Applications (3)

Application Number Title Priority Date Filing Date
JP60500400A Granted JPS61500939A (ja) 1984-01-06 1984-12-24 Ｅ２ｐｒｏｍメモリ装置
JP4331611A Pending JPH05267690A (ja) 1984-01-06 1992-12-11 Ｅ２ｐｒｏｍメモリセル
JP5163539A Pending JPH06163918A (ja) 1984-01-06 1993-07-01 Ｅ２ｐｒｏｍメモリセル

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP4331611A Pending JPH05267690A (ja) 1984-01-06 1992-12-11 Ｅ２ｐｒｏｍメモリセル
JP5163539A Pending JPH06163918A (ja) 1984-01-06 1993-07-01 Ｅ２ｐｒｏｍメモリセル

Country Status (4)

Country Link
US (1) US4654825A (en])
EP (1) EP0167595A4 (en])
JP (3) JPS61500939A (en])
WO (1) WO1985003162A1 (en])

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5172196A (en) * 1984-11-26 1992-12-15 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
US4742492A (en) * 1985-09-27 1988-05-03 Texas Instruments Incorporated EEPROM memory cell having improved breakdown characteristics and driving circuitry therefor
US4783766A (en) * 1986-05-30 1988-11-08 Seeq Technology, Inc. Block electrically erasable EEPROM
JPH0787219B2 (ja) * 1986-09-09 1995-09-20 三菱電機株式会社 半導体記憶装置
JP2688492B2 (ja) * 1987-06-19 1997-12-10 アドバンスト・マイクロ・デバイシズ・インコーポレイテッド 電気的消去可能プログラマブルリードオンリメモリ
DE3807162A1 (de) * 1987-07-02 1989-01-12 Mitsubishi Electric Corp Halbleiterspeichereinrichtung
US5005155A (en) * 1988-06-15 1991-04-02 Advanced Micro Devices, Inc. Optimized electrically erasable PLA cell for minimum read disturb
US5101378A (en) * 1988-06-15 1992-03-31 Advanced Micro Devices, Inc. Optimized electrically erasable cell for minimum read disturb and associated method of sensing
US5020030A (en) * 1988-10-31 1991-05-28 Huber Robert J Nonvolatile SNOS memory cell with induced capacitor
US5308783A (en) * 1992-12-16 1994-05-03 Siemens Aktiengesellschaft Process for the manufacture of a high density cell array of gain memory cells
JP2663863B2 (ja) * 1994-04-19 1997-10-15 日本電気株式会社 不揮発性半導体記憶装置
EP0778581B1 (en) * 1995-12-07 2002-08-14 Samsung Electronics Co., Ltd. Nonvolatile memory device
WO2016122509A1 (en) * 2015-01-29 2016-08-04 Hewlett-Packard Development Company, L.P. Integrated circuits
JP2023089475A (ja) * 2021-12-16 2023-06-28 タワー パートナーズ セミコンダクター株式会社 半導体装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4203158A (en) * 1978-02-24 1980-05-13 Intel Corporation Electrically programmable and erasable MOS floating gate memory device employing tunneling and method of fabricating same
US4377818A (en) * 1978-11-02 1983-03-22 Texas Instruments Incorporated High density electrically programmable ROM
US4266283A (en) * 1979-02-16 1981-05-05 Intel Corporation Electrically alterable read-mostly memory
JPS55111173A (en) * 1979-02-20 1980-08-27 Nec Corp Semiconductor memory device
US4342099A (en) * 1979-06-18 1982-07-27 Texas Instruments Incorporated Electrically erasable programmable MNOS read only memory
US4467453A (en) * 1979-09-04 1984-08-21 Texas Instruments Incorporated Electrically programmable floating gate semiconductor memory device
US4317272A (en) * 1979-10-26 1982-03-02 Texas Instruments Incorporated High density, electrically erasable, floating gate memory cell
JPS56108259A (en) * 1980-02-01 1981-08-27 Hitachi Ltd Semiconductor memory device
US4366555A (en) * 1980-08-01 1982-12-28 National Semiconductor Corporation Electrically erasable programmable read only memory
DE3136517C2 (de) * 1980-09-26 1985-02-07 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Nichtflüchtige Halbleiter-Speichervorrichtung
US4379343A (en) * 1980-11-28 1983-04-05 Hughes Aircraft Company Electrically erasable programmable read-only memory cell having a shared diffusion
JPS57141969A (en) * 1981-02-27 1982-09-02 Toshiba Corp Nonvolatile semiconductor memory
JPS5834979A (ja) * 1981-08-27 1983-03-01 Nec Corp 不揮発性半導体記憶装置およびその製造方法
US4477825A (en) * 1981-12-28 1984-10-16 National Semiconductor Corporation Electrically programmable and erasable memory cell
US4471471A (en) * 1981-12-31 1984-09-11 International Business Machines Corporation Non-volatile RAM device
US4558344A (en) * 1982-01-29 1985-12-10 Seeq Technology, Inc. Electrically-programmable and electrically-erasable MOS memory device

Also Published As

Publication number Publication date
WO1985003162A1 (en) 1985-07-18
US4654825A (en) 1987-03-31
JPH06163918A (ja) 1994-06-10
EP0167595A4 (en) 1988-02-03
JPH05267690A (ja) 1993-10-15
EP0167595A1 (en) 1986-01-15
JPS61500939A (ja) 1986-05-08

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